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maskless lithography
In maskless lithography, the radiation that is used to expose a photosensitive emulsion (or photoresist) is not projected from, or transmitted through, a photomask.〔R. Menon ''et al.,'', Materials Today, Feb. 2005, pp. 26-33 (2005).〕 Instead, most commonly, the radiation is focused to a narrow beam. The beam is then used to directly write the image into the photoresist, one or more pixels at a time. An alternative method, developed by Micronic Laser Systems or (Heidelberg Instruments ), is to scan a programmable reflective photomask, which is then imaged onto the photoresist. This has the advantage of higher throughput and flexibility. Both methods are used to define patterns on photomasks.
A key advantage of maskless lithography is the ability to change lithography patterns from one run to the next, without incurring the cost of generating a new photomask. This may prove useful for double patterning.
==Forms of maskless lithography==
Currently, the main forms of maskless lithography are electron beam and optical. In addition, focused ion beam systems have established an important niche role in failure analysis and defect repair. Finally, systems based on arrays of probe tips have recently been announced.
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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